Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

62A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Turn Off Delay Time  

21 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-40°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2005

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

330W

Case Connection  

DRAIN

Turn On Delay Time  

33 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

26m Ω @ 46A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

98nC @ 10V

Rise Time  

20ns

Vgs (Max)  

±30V

Fall Time (Typ)  

31 ns

Continuous Drain Current (ID)  

62A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.026Ohm

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

260A

Dual Supply Voltage  

240V

Recovery Time  

150 ns

Nominal Vgs  

5 V

Height  

4.826mm

Length  

10.67mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free